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Rajib Rahman
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Works
7
Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots
Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETs
Electrically doped WTe 2 tunnel transistors
article
Achieving a higher performance in bilayer graphene FET - strain engineering
Switching Mechanism and the Scalability of Vertical-TFETs
Can Homojunction Tunnel FETs Scale Below 10 nm?
article by Hesameddin Ilatikhameneh et al published January 2016 in IEEE Electron Device Letters
Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS2 Heterostructures
scientific article published on 21 February 2017
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