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Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots
Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETs
Electrically doped WTe 2 tunnel transistors
Achieving a higher performance in bilayer graphene FET - strain engineering
Switching Mechanism and the Scalability of Vertical-TFETs
Can Homojunction Tunnel FETs Scale Below 10 nm?
